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MOSAID Introduces Breakthrough Flash Memory Architecture
Monday, May 07, 2007
Ottawa, Ontario, Canada -- MOSAID Technologies Inc. (TSX:MSD), today unveiled HyperLink NAND (HLNAND) Flash, a breakthrough Flash memory architecture and interface that will dramatically improve the performance of computer products that use Flash memory, including solid state drives (SSDs), Flash memory cards and USB Flash drives.
As the first new Flash memory architecture and device interface in 15 years, HLNAND Flash is a high-performance solution that combines MOSAID's own HyperLink memory technology with industry standard NAND Flash cell technology to deliver the industry's most advanced feature set, reaching sustained I/O bandwidths more than ten times higher than conventional Flash. MOSAID, one of the world's leading intellectual property companies, will license HLNAND Flash to semiconductor manufacturers developing components for the NAND Flash market, which is expected to grow from US$15.1 billion in 2006 to US$41.5 billion by 2011.
"Many of today's high density NAND Flash components are suffering from degraded performance - primarily reduced write speeds and lower endurance than the last generation of devices - because of fundamental architectural and interface constraints," said Alan Niebel, CEO of memory and storage market research firm Web-Feet Research. "MOSAID has developed a novel device architecture, a new interface standard, and an innovative write scheme to reverse the degradation trend and offer very significant improvements to the performance and reliability of solid state drives and other components that use NAND Flash memory. With HLNAND, MOSAID is establishing itself as the high performance leader in the rapidly growing NAND Flash market."
For example, SSDs using Flash memory are becoming a viable alternative to rotating magnetic hard disk drives. However, the performance requirements of next-generation SSDs cannot be met by the existing NAND Flash architecture and interface. "Our technical staff analyzed the features and specifications of MOSAID's HLNAND and we believe this innovative approach will help Flash semiconductor manufacturers and mass-storage Original Equipment Manufacturers meet the challenge of designing more robust SSDs and other consumer-driven mass storage applications," said Mr. K.S. Pua, President of Phison Electronics Corporation, a leading controller design company. "Phison has a highly qualified team delivering the best Flash memory based products for the mass market and it is our utmost priority to support emerging Flash technology. Therefore, Phison has signed a license agreement with MOSAID and is looking forward to working with the Company's memory experts to develop systems that use HLNAND."
"The introduction of HLNAND demonstrates MOSAID's commitment to the development of innovative memory technologies that advance the industry, and also generate new patents and future licensing revenues," said Peter Gillingham, Chief Technology Officer, MOSAID. "HLNAND is the first application of MOSAID's innovative HyperLink memory technology. Our new device and channel architectures may be applied to any type of memory, including NOR Flash and emerging memory technologies such as Phase-change RAM (PRAM), to create HLNOR and HLPRAM."
MOSAID is actively seeking additional partners and licensees to further develop and commercialize HLNAND technology, Gillingham added.
HyperLink NAND - An Innovative Memory Architecture
The shift to computing-based consumer products and the rising demand for mass storage media in data storage applications is driving the requirements for improved NAND Flash performance and reduced system costs. To meet these needs, SSDs and other emerging Flash memory intensive applications will require NAND Flash components utilizing a new device architecture and an enhanced interface or channel architecture to deliver higher performance, lower cost, and an improved write scheme for better reliability. MOSAID's HLNAND Flash technology, is the first NAND Flash architecture to satisfy the emerging industry requirements for fast read, fast program, long retention, high endurance, high capacity and low cost.
HLNAND Flash delivers sustained read and write bandwidth up to 800MB/s using existing NAND Flash cell technology. HLNAND Flash offers a highly expandable memory subsystem, supporting up to 255 devices on a single interface. The improved write scheme provides significant improvements to program and erase endurance and also enables lower voltage operation to yield lower power consumption in portable applications.
MOSAID launches HLNAND.com
Today MOSAID launched www.hlnand.com, a new web site dedicated to its innovative HyperLink NAND Flash memory technology. Technical specifications, simulation models, product briefs and other information are now available for download.
MOSAID Technologies Incorporated makes semiconductors better through the development and licensing of intellectual property. MOSAID counts many of the world's largest semiconductor companies among its customers. Founded in 1975, MOSAID is based in Ottawa, Ontario, with an office in Santa Clara, California. For more information, visit www.mosaid.com.
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